Impact of conductivity type of vanadium doped 4H-SiC epilayer on semi-insulating characteristics

We Investigated the influence of impurities on semi-insulating characteristics, and fabricated 3-inch 4H-SiC SI epitaxial wafer. N-base samples easily shows semi-insulating characteristics by V doping compared with p-base samples. The activation energies in n-base and p-base samples are clarified. Semi insulating layer was successfully grown on 3-inch 4H-SiC substrate without any specific defects.