光探测
光电子学
神经形态工程学
响应度
材料科学
光电探测器
仿真
异质结
兴奋性突触后电位
微电子
光电二极管
突触重量
计算机科学
突触后电流
光子学
物理
等离子体子
抑制性突触后电位
突触后电位
记忆电阻器
探测器
嗅
纳米技术
作者
Fuhao He,Xiaofang Shi,Wanrong Liu,Chenxing Jin,Guansong Qiu,Jia Sun,Junliang Yang
标识
DOI:10.1021/acs.jpclett.6c02730
摘要
Merging optoelectronic sensing with synaptic emulation is critical for the progression of artificial intelligence. Herein, we report a bias-configurable dual-mode optoelectronic device engineered from a PTCDI-C8/C8-BTBT organic heterojunction, enabling a reversible transition between photodetection and optoelectronic synaptic memory. Under zero source-drain bias operation, the device functions as a high-performance photodetector, exhibiting a responsivity of 3.0 mA W-1 and a specific detectivity of 7.97 × 1011 Jones, thereby facilitating advanced multiwavelength imaging and optical communication applications. Alternatively, in the synaptic mode, the device exhibits a gate-tunable bipolar photoresponse that successfully emulates excitatory and inhibitory postsynaptic currents. Consequently, this work presents a viable pathway for integrating photodetection and memory capabilities within organic optoelectronic frameworks.
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