电气工程
微线圈
CMOS芯片
放大器
物理
光电子学
电压
晶体管
专用集成电路
炸薯条
收发机
材料科学
电子工程
电磁线圈
工程类
作者
Heiko Bürkle,Tobias Klotz,Reiner Krapf,Jens Anders
标识
DOI:10.1109/esscirc53450.2021.9567823
摘要
This paper presents a single-chip high-voltage transceiver ASIC for low-field NMR spectroscopy. The chip integrates an adjustable high-voltage (HV) H-bridge power amplifier (PA) with a PLL frequency synthesizer and a quadrature low intermediate frequency (low-IF) receiver, achieving a measured input-referred voltage noise density of 1.1 nV / ✓Hz. The operating frequency of the chip is from 0.1 MHz to 200 MHz, supporting all relevant Larmor frequencies for low-field mobile and portable NMR. The PA consists of four isolated 50 V NMOS transistors, isolated gate drivers with a digitally adjustable deadtime control, high-frequency level shifters, and a TX-control logic that supports bootstrapping of the integrated high-side drivers. The output current can be defined by an adjustable voltage supply from 0 V to 50 V, delivering a maximum current of 2.0 App into a non-tuned 3 mm NMR coil and up to 8.3 App into a parallel tuned NMR coil. Inside a custom-designed 1.1 T portable NMR magnet, the system achieves a spin sensitivity of 1.1 × 10 16 spins/ ✓Hz and a concentration sensitivity of 1mM/✓Hz.
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