Electromechanical response of piezoelectric thin films subjected to large strain

The use of piezoelectric thin sensors, when subjected to large static strain levels in ultrasonic applications is reported in this paper. A novel flipped beam bending method is proposed to induce static strain level nearing twice the incipient yield strain in the beam material (~0.39%). First, the effect of static large strain on ultrasonic guided wave propagation in the beam was studied using the velocity measurements obtained from a laser Doppler vibrometer. Next, the ultrasonic response of thin sensors is studied under compressive and tensile static strain (±0.72%) with the sensors symmetrically bonded on the lower and upper surfaces, and at the same axial location. The ultrasonic guided wave response to varying levels of static strain is recorded at different center frequencies (50–400 kHz) of the narrow banded ultrasonic excitation. As a case study, the variation of the ultrasonic guided wave response of polyvinylidene difluoride (PVDF) thin sensors with center frequencies at different static strain levels was analyzed and compared with that of lead zirconate titanate (PZT) thin sensors. PZT sensors show a higher variation of sensing performance with strain when compared to PVDF sensors. Apart from static strain, the possible effects on the change in performance of sensors, such as the change in the capacitance is discussed. The characterization method provides a reusable beam arrangement to study the ultrasonic sensor performance at large static strain levels. Characterization at large strain level allows the development of fail-safe sensors even under large strain and permanent plastic deformation of structure on which they are bonded, allowing accurate ultrasonic structural health monitoring even in the presence of damage progression. Piezopolymer sensor like PVDF are least susceptible to static strain due to large yield strain and low modulus and can serve as fail-safe sensors under large strain.