德拉姆
材料科学
动态随机存取存储器
三苯胺
热稳定性
聚合物
电阻随机存取存储器
非易失性存储器
光电子学
纳米技术
化学工程
计算机科学
半导体存储器
电极
复合材料
计算机硬件
化学
物理化学
工程类
作者
Kang Chen,Yuhang Yin,Cheng Song,Zhengdong Liu,Xiaojing Wang,Yueyue Wu,Jing Zhang,Jianfeng Zhao,Minghua Tang,Juqing Liu
出处
期刊:Polymer
[Elsevier BV]
日期:2021-08-10
卷期号:230: 124076-124076
被引量:12
标识
DOI:10.1016/j.polymer.2021.124076
摘要
Two-dimensional (2D) memristive materials are of primary interest for resistive memory electronics. Herein, we report a high performance volatile dynamic-random-access memory (DRAM) based on 2D triphenylamine polymer. The 2D polymer was prepared via a solid-liquid interface limited polymerization method, with the merits of large-area, structure stability, and controllable film thicknesses. Utilizing the layered polymer as memristive medium in diode, the device shows a typical volatile DRAM performance. Impressively, the memory has an ultrahigh on/off current ratio up to 10 7 , as well as outstanding thermal stability approaching at 300 °C. Both current ratio and thermal stability are higher than most previous polymer DRAM memories. Our work provides an effective strategy to construct scalable and stable 2D polymers toward high performance memory. A high performance dynamic random-access memory (DRAM) based on two-dimensional (2D) triphenylamine-based polymer is reported. The device shows typical volatile memory function, with an ultrahigh on/off current ratio up to 10 7 , as well as outstanding thermal stability approaching at 300 °C. • A large-area and structure stable 2D triphenylamine-based polymer was prepared through interface-limited polymerization. • A 2D material-based volatile memory was fabricated with an ultrahigh on/off current ratio up to 10 7 . • The device showed DRAM memory performance even after annealing at 300 °C, indicating its excellent thermal stability.
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