Characterization of MOS structure inversion and accumulation layer by approximate solution of Schrodinger equation

Quantized inversion and accumulation layers are characterized through an approximate method by solving the Schrodinger equation analytically under a triangle potential well approximation. Results are compared with a fully numerical method by self-consistent solution of Schrodinger and Poisson equations. It is shown that both carrier sheet density and surface potential can be determined by analytical solution with sufficiently high accuracy. However, the carrier distribution profile and centroid of mobile charge layer have a large deviation from the numerical results.