Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022)

Advanced Electronic MaterialsVolume 8, Issue 9 2270047 Inside Back CoverFree Access Highly Stretchable MoS2-Based Transistors with Opto-Synaptic Functionalities (Adv. Electron. Mater. 9/2022) Jiawei Li, Jiawei LiSearch for more papers by this authorNa Li, Na LiSearch for more papers by this authorQinqin Wang, Qinqin WangSearch for more papers by this authorZheng Wei, Zheng WeiSearch for more papers by this authorCongli He, Congli HeSearch for more papers by this authorDashan Shang, Dashan ShangSearch for more papers by this authorYutuo Guo, Yutuo GuoSearch for more papers by this authorWoyu Zhang, Woyu ZhangSearch for more papers by this authorJian Tang, Jian TangSearch for more papers by this authorJieying Liu, Jieying LiuSearch for more papers by this authorShuopei Wang, Shuopei WangSearch for more papers by this authorWei Yang, Wei YangSearch for more papers by this authorRong Yang, Rong YangSearch for more papers by this authorDongxia Shi, Dongxia ShiSearch for more papers by this authorGuangyu Zhang, Guangyu ZhangSearch for more papers by this author Jiawei Li, Jiawei LiSearch for more papers by this authorNa Li, Na LiSearch for more papers by this authorQinqin Wang, Qinqin WangSearch for more papers by this authorZheng Wei, Zheng WeiSearch for more papers by this authorCongli He, Congli HeSearch for more papers by this authorDashan Shang, Dashan ShangSearch for more papers by this authorYutuo Guo, Yutuo GuoSearch for more papers by this authorWoyu Zhang, Woyu ZhangSearch for more papers by this authorJian Tang, Jian TangSearch for more papers by this authorJieying Liu, Jieying LiuSearch for more papers by this authorShuopei Wang, Shuopei WangSearch for more papers by this authorWei Yang, Wei YangSearch for more papers by this authorRong Yang, Rong YangSearch for more papers by this authorDongxia Shi, Dongxia ShiSearch for more papers by this authorGuangyu Zhang, Guangyu ZhangSearch for more papers by this author First published: 07 September 2022 https://doi.org/10.1002/aelm.202270047AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Stretchable Opto-Synaptic Transistors In article number 2200238, Na Li, Guangyu Zhang, and co-workers demonstrate highly stretchable monolayer MoS2 field effect transistors with buckled structures. These devices exhibit excellent electrical properties under a large uniaxial/biaxial stretching or oft-repeated tensile force, and such stretchable devices could be well applied to mimic synapses for neuromorphic computation. Volume8, Issue9September 20222270047 RelatedInformation