Growth and Electronic Properties of SnSe2 Films on Reconstructed, (111)-Oriented SrTiO3 Substrates

Heterointerfaces and heterostructures offer unprecedented potential for tailoring the physical behaviors of two-dimensional materials. In this work, we investigate the growth and electronic properties of SnSe2 films on the 3 × 3 reconstructed (111)-oriented SrTiO3 surface using scanning tunneling microscopy/spectroscopy. A distinct coverage-dependent growth mode is identified, which is unambiguously correlated with the spatial distribution of the electronic properties of SnSe2 films. We further demonstrate that the interfacial modification using a van der Waals-layered material of low work function (1T′-WSe2) between SnSe2 films and the substrate effectively alters the growth and the electronic structures of SnSe2. Our results provide useful insights into the interfacial phenomena that crucially influence the growth and functionalities of SnSe2 films.