Direct X-ray Photodetector Based on Polycrystalline CsCu2I3 Wafer Prepared by Compression Method

The metal halide compounds are suitable for direct X-ray detection with their excellent carrier transport rate, easily fabrication, solution processibility and efficient X-ray absorption. Herein, we report the fabrication of a simple structure CsCu2I3direct-type X-ray detector with high sensitivity and low cost. CsCu2I3crystallites were synthesized by a solid-state reaction assisted by solution. A small amount of C60was added into the prepared CsCu2I3crystallites to obtain circular CsCu2I3polycrystalline wafers with a diameter of 10 mm by simply pressing method. A photodiode X-ray detector was fabricated with the CsCu2I3wafer as the active layer. The sensitivity of the CsCu2I3detector with an X-rays dose rate of 5159.5 uCGyair•cm-2. The calculated detection limit is as low as 840.8 nCGyairs-1. Results show that the X-ray detector prepared by the simply pressing CsCu2I3microcrystals as the active layer with favorable X-ray detection performance has the extremely high application potential in the field of X-ray detection by direct method.