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Microstructural and properties investigations of tantalum-doped tungsten diboride ceramic coatings via HiPIMS and RF magnetron sputtering

材料科学 高功率脉冲磁控溅射 陶瓷 冶金 溅射沉积 兴奋剂 二硼化钛 结构材料 溅射 纳米技术 光电子学 薄膜
作者
Rafał Psiuk,Justyna Chrzanowska-Giżyńska,Piotr Denis,E. Wyszkowska,Maria Wiśniewska,Marta Lipińska,Ewa Wojtiuk,Ł. Kurpaska,J. Smolik,Tomasz Mościcki
出处
期刊:Archives of Civil and Mechanical Engineering [Springer Science+Business Media]
卷期号:24 (4) 被引量:1
标识
DOI:10.1007/s43452-024-01050-0
摘要

Abstract In this work, tantalum-doped tungsten boride ceramic coatings were deposited from a single sputtering target with the radio frequency (RF) and high-power impulse magnetron sputtering (HiPIMS) methods. Two-inch torus targets were synthesised from pure elements with the spark plasma sintering (SPS) method with a stoichiometric composition of W 1-x Ta x B 2.5 ( x = 0, 0.08, 0.16, 0.24). Films were deposited with RF and HiPIMS power suppliers at process temperatures from RT to 600 °C. The substrate heating and the energy of the ionised material impacting the substrate increase the surface diffusivity of adatoms and are crucial in the deposition process. The results of SEM and XRD investigations clearly show that the addition of tantalum also changes the microstructure of the deposited films. The coatings without tantalum possess a finer microstructure than those with 24% of tantalum. The structure of films is homogeneous along the film thickness and composed mainly of columns with a (0001) preferred orientation. Deposited coatings are composed mainly of P 6 /mmm α -WB 2 structures. The analysis of nanoindentation results allowed us to determine that ceramic coatings obtained with the HiPIMS method possess hardness above 41 GPa and a ratio of hardness to reduced Young modulus above 0.1. The thickness of HiPIMS-deposited films is relatively small: only around 60% of the RF magnetron sputtered coatings even when the average power input was two times higher. However, it has been shown that the RF coatings require heating the substrate above 400 °C to obtain a crystalline structure, while the HiPIMS method allows for a reduction of the substrate temperature to 300 °C.
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