Spin-correlation transport and multiple resistive states in multiferroic tunnel junctions

Multiferroic tunneling junctions (MFTJs), which comprise magnetic electrodes and extremely thin ferroelectric tunneling barriers, are promising contenders for nonvolatile memory applications. Noncollinear antiferromagnetic ${\mathrm{Mn}}_{3}\mathrm{Sn}$ with time-reversal symmetry-breaking polarization properties and ferroelectric $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ may open up the possibility of constructing room-temperature MFTJs. In this study, we investigate the spin-correlation transport in the MFTJs with ${\mathrm{Mn}}_{3}\mathrm{Sn}/\mathrm{BN}/\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}/{\mathrm{Mn}}_{3}\mathrm{Sn}$ structure using first-principles calculations. The resistance in this structure can be manipulated by tuning the directions of both the N\'eel vector of ${\mathrm{Mn}}_{3}\mathrm{Sn}$ and the electric polarization of the $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ layer. Thus, multiple tunneling resistive states can be realized. We predict that huge tunneling magnetoresistance up to 6650% can be obtained by switching the magnetically oriented N\'eel vectors of ${\mathrm{Mn}}_{3}\mathrm{Sn}$, and more than 8000% tunneling electrical resistance can be obtained by controlling the ferroelectric structure of $\ensuremath{\alpha}\text{\ensuremath{-}}{\mathrm{In}}_{2}{\mathrm{Se}}_{3}$. Our work underscores the potential applications of ${\mathrm{Mn}}_{3}\mathrm{Sn}$ in multiferroic nonvolatile memories and lays the foundation for the development of ultrafast and efficient spintronic devices utilizing antiferromagnets.