Parameterization of the band gap energy for GaNxAs1−x−zPz alloys

It is proposed here that the band gap energy for GaNxAs1−x−zPz (type II alloys) can be parameterized within a method which was demonstrated for Ga1−yInyNxAs1−x (type I alloys) [J. Appl. Phys. 101, 023522 (2007)]. This method requires knowledge of the band gap energy of GaNxAs1−x and GaNxP1−x as well as a bowing parameter. It has been observed that the obtained band gap predictions are in good agreement with available experimental data for GaNAsP.