范德瓦尔斯力
色散(光学)
伦敦分散部队
密度泛函理论
航程(航空)
材料科学
Atom(片上系统)
能量(信号处理)
电子结构
凝聚态物理
统计物理学
分子物理学
计算物理学
物理
量子力学
计算机科学
分子
嵌入式系统
复合材料
作者
Birkan Emrem,Roman Kempt,Kati Finzel,Thomas Heine
标识
DOI:10.1002/adts.202200055
摘要
Abstract Most density functionals lack to correctly account for long‐range London dispersion interactions, and numerous a posteriori correction schemes have been proposed in recent years. In van der Waals structures, the interlayer distance controls the proximity effect on the electronic structure, and the interlayer interaction energy indicates the possibility to mechanically exfoliate a layered material. For upcoming twisted van der Waals heterostructures, a reliable but efficient and scalable theoretical scheme to correctly predict the interlayer distance is required. Therefore, the performance of a series of popular London dispersion corrections combined with computationally affordable density functionals is validated. As reference data, the experimental interlayer distance of layered bulk materials is used, and corresponding interlayer interaction energies are calculated using the random phase approximation. We demonstrate that the SCAN‐rVV10 and PBE‐rVV10L functionals predict interlayer interaction energies and interlayer distances of the studied layered systems within the range of the defined error limits of 10 meV per atom and 0.12 Å, respectively. Semi‐empirical and empirical dispersion‐corrected functionals show significantly larger error bars, with PBE+dDsC performing best with comparable quality of geometries, but with higher interlayer interaction energy error limits of ≈20 meV per atom.
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