带隙
半导体
材料科学
电场
直接和间接带隙
凝聚态物理
宽禁带半导体
光电子学
调制(音乐)
声子
光子晶体
物理
声学
量子力学
作者
Yu Zhang,Xinxin Wang,Lei Shi
标识
DOI:10.1088/1361-648x/abba66
摘要
Bulk GeSe is an indirect bandgap semiconductor. However, direct bandgap semiconductor of two-dimensional GeSe can be obtained by applying strain along armchair direction, and the direct bandgap can be tuned in a wide energy range from 0.86 eV to 0.00 eV by electric field. The bandgap modulation mechanism is studied in detail by first-principle calculations. The calculations of phonon spectra show that the crystal structure is relatively stable under the strain and electric field. Therefore, 2D GeSe is a promising material in frequency adjustable electronic and optical devices.
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