Electrical resistivity and Hall resistivity of thin films of amorphous Cr1-xMnxGe

The electrical resistivity rho and the Hall resistivity rho H of thin films of amorphous Cr 1-x Mn x Ge(0 or=0.2 although minima and maxima in the electrical resistivity are observed for x=0 and 0.1. The low-temperature data on the relative electrical resistivity rho R (t) for x>or=0.3 satisfy the relation rho R (T)=A+B exp(-CT). The coefficient C shows a minimum at x approximately=0.5. The Hall resistivity increases monotonically with increasing Mn content. A possible explanation for the magnetic properties of amorphous Cr 1-x Mn x Ge alloys is given on the basis of these transport measurements.