光束线
离子注入
兴奋剂
商业化
等离子体
材料科学
等离子体浸没离子注入
光电子学
离子
工程物理
光学
工程类
物理
核物理学
业务
量子力学
营销
梁(结构)
标识
DOI:10.1109/iit.2002.1257961
摘要
The trend towards shallower junctions especially in high dose applications, for example source drain extensions, results in significant challenges for ion implantation. Satisfying increasingly stringent device performance requirements, such as energy purity, dose uniformity and implant angle control, runs counter to maintaining adequate productivity with beamline systems. The limitations of beamline implant are discussed and compared with the capabilities of plasma doping technologies to address these requirements. Recent changes in the trend towards commercialization of plasma doping are summarized.
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