Simulation of Electrical Properties of β-Ga2O3 Schottky Barrier Diode with Different Schottky Metals for Power Electronic Devices

The electrical properties of β-Ga2O3 Schottky Barrier Diode (SBD) depending on different Schottky metals are analyzed by numerical simulation for power electronic devices. SBDs based on β-Ga2O3 are formed by using three different Schottky metals: Ni, Au and Pt. Based on a comparison of the energy band diagram, the Schottky barrier height (ΦBn), the Schottky barrier lowering (∆Φ), the threshold voltage (Vbi), the depletion width (WD), maximum electric field (Emax), depletion charge (Q), the on-resistance (Ron), the breakdown voltage (VB), the reverse saturation current (Is), current-voltage (I-V) characteristics, capacitance-voltage (C-V) characteristics, power dissipation (PD) and rectification ratio (RR)  are calculated for three metals (Ni, Au, Pt) at room temperature. In doing so, 1.5 × 1014 cm-3 of the effective doping concentration Nd is used. Finally, the obtained results are compared and the most suitable one is chosen to be used in power electronic devices. The results from this analysis agree with the fact that the metal choice is very important for SBDs.