材料科学
活性氧
掺杂剂
正电子湮没谱学
硫黄
纳米技术
密度泛函理论
电子顺磁共振
氧气
兴奋剂
化学工程
光化学
电子
光电子学
正电子
有机化学
化学
正电子湮没
计算化学
核磁共振
冶金
工程类
物理
量子力学
生物化学
作者
Parbati Basu,Jayita Chakraborty,Nirmal Ganguli,Khushi Mukherjee,Krishnendu Acharya,Biswarup Satpati,Sudipta Khamrui,Suman Mandal,Debmalya Banerjee,D. K. Goswami,P.M.G. Nambissan,Kuntal Chatterjee
标识
DOI:10.1021/acsami.9b12988
摘要
Meticulous surface engineering of layered structures toward new functionalities is a demanding challenge to the scientific community. Here, we introduce defects on varied MoS2 surfaces by suitable doping of nitrogen atoms in a sulfur-rich reaction environment, resulting in stable and scalable phase conversion. The experimental characterizations along with the theoretical calculations within the framework of density functional theory establish the impact of nitrogen doping on stabilization of defects and reconstruction of the 2H to 1T phase. The as-synthesized MoS2 samples exhibit excellent dye removal capacity in the dark, facilitated by a synergistic effect of reactive oxygen species (ROS) generation and adsorption. Positron annihilation spectroscopy and electron paramagnetic resonance studies substantiate the role of defects and associated sulfur vacancies toward ROS generation in the dark. Further, on the basis of its ample ROS generation in the dark and in the light, the commendable antimicrobial activity of the prepared MoS2 samples against fungal pathogen Alternaria alternata has been demonstrated. Thus, the present study opens up a futuristic avenue to develop newer functional materials through defect engineering by suitable dopants toward superior performances in environment issues.
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