A comparative study of oxidized spacer trench and micro-pattern trench concepts for 1200 V IGBTs

The micro-pattern trench (MPT) cell topology is a common front-side concept for current IGBT technologies, used in voltage classes ranging from 650 V to 1200 V and higher. In contrast, the side-gate concept is mostly applied to higher voltage classes above 1200 V showing a gain in performance. A comparison of these concepts was made based on an adapted new structure labeled oxidized spacer trench (OST). It maintains the cell dimensions and parameters as gate charge, trench depth and shape from the MPT-IGBT, while oxidizing the areas between the gate trenches, to focus purely on the physical effects of the remaining structural change.