In this paper, in order to further improve the driving load of TTL NAND gate, and make the students and its application on the TTL NAND gate are steadfast, clearly grasp principle and method to improve driving load ability of TTL NAND gate, use the method of quantitative calculation and test of TTL NAND gate with the essence of the load capacity were studied, affirmed the existing principle of methods to raise the capacity of TTL NAND gate drive load, and puts forward a method ti reduce the output resistance of the TTL NAND gate, through the theory and experiments show that it has quite practical value.