High hole mobility GeSn on insulator formed by self-organized seeding lateral growth

Abstract Tensile strained single-crystal GeSn on insulator (GSOI) was obtained using self-organized seeding lateral growth. Segregation of Sn atoms and Sn distribution occurred during the lateral growth of the GeSn stripe. At both edges of the GSOI, Sn concentration distribution was found in good agreement with calculation based on the Scheil equation. P-channel metal–oxide–semiconductor field effect transistors were fabricated using the GSOI materials. Good transistor performance with the low field peak hole mobility of 383 cm 2 V −1 s −1 was obtained, which indicated the high quality of this GSOI structure.