PHOTOVOLTAIC EFFECT IN THE METAL BASED SULFOSALT THIN FILM DEPOSITED BY PHYSICAL VAPOR DEPOSITION TECHNIQUE

pressure. The deposited thin films were annealed at 150 ° C in tube furnace in the presence of argon gas. For characterization, thin films were subjected to X-ray diffraction (XRD), SEM, EDS and J.A. Woollam variable angle ellipsometry (VASE) for structural, surface morphological, elemental composition and optical properties respectively. The film has ntype conductivity, confirmed by hot point probe technique. The film has good optical, structural and electrical properties extremely suitable for the use as non-toxic, environmental friendly absorbing layer in solar cell. (Received March 4, 2013; Accepted April 4, 2013)