Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films

HfO2 films were prepared by electron beam evaporation on K9 glass. The residual stresse was measured by viewing the substrate deflection using ZYGO interferometer. The influences of deposition rate and oxygen partial pressure on the residual stress were studied. The results show that all the residual stresses are tensile stresses. The packing density of films increases while the residual stress decreases with the increasing deposition rates and the decreasing oxygen partial pressure. The microstructure of the HfO2 films was inspected by X-ray diffraction （XRD）. The relationship between the stress and the microstructure was also discussed.