A negative‐working high‐resolution photoresist system is described. The preparation of the polymer and sensitizer components of the photoresist is outlined. The importance of the molecular weight distribution of the polymer on the properties of the photoresists is discussed. Consideration of this, and other, parameters has lead to a resist formulation capable of functioning in film thicknesses of 2000–3000Aå, showing an acceptably low pinhole density and having a resolution capability of 400 lines/mm.