Soft-Error Resilient MRAM-OTP BCAM for DDR4 STT-MRAM Redundancy Management

Memory systems operating in high-radiation environments require robust protection against single-event effects (SEE) damage. While STT-MRAM offers inherent advantages due to its spin-based storage, conventional redundancy repair architectures remain vulnerable due to separated storage and configuration circuits, slow boot performance, and radiation-induced errors in long signal paths. This paper proposes a novel radiation-hardened one-time programmable (OTP) content-addressable memory (CAM) based on magnetic tunnel junctions (MTJs) for efficient column redundancy in STT-MRAM macros. The design incorporates a radiation-hardened-by-design (RHBD) CAM array with built-in self-repair (BISR), featuring complementary OTP MTJ bitcells enabling parallel programming and disturbance-free matching, a soft-error resilient array with dual-node hardened latches and dual match-line sensing, and a DDR4-compatible repair mechanism supporting TMR-Latch-based fast initialization and energy-efficient search with inter-loop termination. The proposed system significantly improves wake-up speed to less than two clock cycles, and reduces power consumption to less than 12fJ, offering a viable solution for 37MeV radiation-tolerant memory systems.