A highly manufacturable corner rounding solution for 0.18 μm shallow trench isolation
作者
C.P. Chang,C.S. Pai,F.H. Baumann,C.T. Liu,C.S. Rafferty,M.R. Pinto,E.J. Lloyd,M. Bude,F. Klemens,J.F. Miner,Kin P. Cheung,Jennifer Colonell,W.Y.C. Lai,H. Vaidya,S.J. Hillenius,R.C. Liu,J.T. Clemens
标识
DOI:10.1109/iedm.1997.650470
摘要
In this work, we first establish the relationship between corner leakage and corner rounding through device simulation. Then, we demonstrate a novel method to produce corner rounding, using a post-CMP, high temperature re-oxidation process (HTR-STI). A semi-empirical model correlating rounding with re-oxidation and nitride mask thickness is derived from mechanical studies. Finally, we show the electrical properties of devices with HTR-STI for the 0.18 /spl mu/m technology.