材料科学
各向异性
纳米尺度
化学气相沉积
纳米技术
极化(电化学)
兴奋剂
基质(水族馆)
声子
光电子学
纳米结构
凝聚态物理
光学
物理化学
化学
地质学
物理
海洋学
作者
Christian Martella,Carlo Mennucci,Eugenio Cinquanta,Alessio Lamperti,E. Cappelluti,F. Buatier de Mongeot,Alessandro Molle
标识
DOI:10.1002/adma.201605785
摘要
Manipulating the anisotropy in 2D nanosheets is a promising way to tune or trigger functional properties at the nanoscale. Here, a novel approach is presented to introduce a one‐directional anisotropy in MoS 2 nanosheets via chemical vapor deposition (CVD) onto rippled patterns prepared on ion‐sputtered SiO 2 /Si substrates. The optoelectronic properties of MoS 2 are dramatically affected by the rippled MoS 2 morphology both at the macro‐ and the nanoscale. In particular, strongly anisotropic phonon modes are observed depending on the polarization orientation with respect to the ripple axis. Moreover, the rippled morphology induces localization of strain and charge doping at the nanoscale, thus causing substantial redshifts of the phonon mode frequencies and a topography‐dependent modulation of the MoS 2 workfunction, respectively. This study paves the way to a controllable tuning of the anisotropy via substrate pattern engineering in CVD‐grown 2D nanosheets.
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