光电阴极
光电流
光电子学
缓冲器(光纤)
材料科学
半导体
图层(电子)
电解质
光电化学
载流子
表面光电压
化学
电子
电化学
纳米技术
电极
电气工程
物理
物理化学
工程类
量子力学
光谱学
作者
Changli Li,Takashi Hisatomi,Osamu Watanabe,Mamiko Nakabayashi,Naoya Shibata,Kazunari Domen,Jean‐Jacques Delaunay
摘要
Coating n-type buffer and protective layers on Cu2O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu2O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu2O are examined. It is found that a Ga2O3 buffer layer can form a buried junction with Cu2O, which inhibits Cu2O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO2 thin protective layer not only improves the stability of the photocathode but also enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.
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