薄脆饼
功勋
二极管
材料科学
兴奋剂
工程物理
宽禁带半导体
氧化镓
光电子学
氧化物
工程类
冶金
作者
Yongjie He,Feiyang Zhao,Bin Huang,Tianyi Zhang,Hao Zhu
出处
期刊:Materials
[Multidisciplinary Digital Publishing Institute]
日期:2024-04-18
卷期号:17 (8): 1870-1870
被引量:50
摘要
As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7–4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga’s figure of merit (BFOM) of up to 3444, which is 10 and 4 times higher than that of SiC and GaN, respectively, showing great potential for application in power devices. However, the lack of effective p-type Ga2O3 limits the development of bipolar devices. Most research has focused on unipolar devices, with breakthroughs in recent years. This review mainly summarizes the research progress fora different structures of β-Ga2O3 power diodes and gives a brief introduction to their thermal management and circuit applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI