A Stacked Color Conversion Layer Based on Laser‐Induced Ring‐Enclosed Structure for Mini/Micro‐LED

Abstract With the advancement of augmented reality (AR) and virtual reality (VR) technologies, the demand for Mini/Micro‐LED displays has surged. To address the challenges of mass transfer and backlight leakage in Mini/Micro‐LED, this study proposes a stacked color conversion layer based on a laser‐induced ring‐enclosed structure. A nanosecond pulsed laser is focused on the aluminum film to fabricate the ring‐enclosed metal hole structure by thermal explosions and shock effects. This structure integrates inorganic perovskite quantum dots (QDs) and LiF encapsulation to achieve high‐brightness, leakage‐free light‐emitting arrays. The aluminum layer with a suitable thickness (100 nm) eliminates backlight leakage while maintaining intense luminescence. Building on this structure, a tri‐color color conversion layer is developed through repeated fabrication of metal/LiF/QDs multilayers atop the initial LiF/metal/QDs configuration. The transmission differences between dissimilar metals of varying thicknesses make it feasible for this stacked structure to achieve backlight excitation. Eventually, backlight‐excited tri‐color coplanar light‐emitting arrays are successfully achieved with this composite structure.