The Charge Transport Properties of Polycrystalline CVD Diamond Films Deposited on Monocrystalline Si Substrate

In this work, diamond/Si heterojunctions were fabricated by synthesizing a diamond layer directly on a monocrystalline n-type Si substrate. The diamond layers were characterized using micro-Raman spectroscopy, scanning electron microscopy (SEM), and X-ray diffraction (XRD). The current–voltage (I–V) characteristics of the heterojunctions were measured at room temperature. The heterojunctions exhibited rectifying behavior, confirming their diode-like nature. Based on thermionic emission theory, key electrical parameters of the heterojunction diodes—including the ideality factor (n) and carrier mobility (μ)—were estimated from the I–V characteristics. The I–V curves revealed large ideality factors ranging from 1.5 to 6.5, indicating the presence of deep trap states with densities between 2 × 1015 and 8 × 1016 eV−1·cm−3. These variations were attributed to differences in the structural quality of the diamond layers and the effects of surface hydrogen termination.