材料科学
纳米孔
电介质
介电常数
介电强度
光电子学
复合材料
介电常数
纳米技术
电子材料
共价键
模数
数码产品
高-κ电介质
电子结构
共价有机骨架
工程物理
电子包装
薄膜
介电损耗
作者
Maninderjeet Singh,R. Parthiban,Erin M. Schroeder,Saurabh Kr Tiwary,Maria Camila Belduque Correa,Francisco C. Robles Hernández,Devin L. Shaffer,Alamgir Karim
出处
期刊:ACS Nano
[American Chemical Society]
日期:2025-10-14
卷期号:19 (42): 37175-37185
被引量:3
标识
DOI:10.1021/acsnano.5c11582
摘要
There is an urgent need to develop advanced dielectric materials with low permittivities (κ < 1.6) to address performance-limiting challenges for conventional and artificial intelligence (AI) microprocessors with miniaturized feature sizes, namely, delay in processing speeds, electronic crosstalk, high power consumption, and charge buildup. Known low-κ materials show poor dielectric strength and thermo-mechanical properties, rendering them unsuitable for next-generation electronic devices. Here, we demonstrate that the two-dimensional (2D) covalent organic frameworks (COF) films synthesized by the liquid–liquid interfacial reaction show very low permittivities (κ ≈ 1.17 at 100 kHz), ultrahigh dielectric strengths of ≈ 3908 MV/m at room temperature (≈2100 MV/m at 300 °C), low density of ≈1.1 g/cm3, and a high Young’s modulus of ≈3.4 GPa. These properties are enabled by the highly crystalline and tightly packed nanoporous nanosheets of 2D COFs arranged in periodic structures in 2D COF films and surpass the requirements for next-generation electronic devices.
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