P‐153: 8‐inch. Zero‐Defect Germanium Wafers for AlGaInP μ‐LEDs

8′ Ge wafers were developed as the starting substrate for lattice‐matched hetero‐epitaxially grown As‐free AlGaInP layers for 650nm RED μ‐LEDs. This paper focusses on the challenges that we have encountered and the innovations that were needed to develop 8′ Germanium wafers for Arsenic free AlGaInP red μ‐LEDs. The results of germanium 8′ 0EPD crystals and low LPD/COP wafers from our pilot 8′ wafer line, will be shown. This paper also includes a comparison with Si and GaAs.