Highly Efficient InOOH/ZnIn2S4 Hollow Sphere S-Scheme Heterojunction with 0D/2D Interface for Enhancing Photocatalytic CO2 Conversion

S-scheme heterojunction system represents a highly efficient strategy for photocatalytic applications as it can simultaneously facilitate photogenerated charge carrier separation and enhance the reduction-oxidation potentials of the photocatalyst . Despite its gigantic potential, the photocatalytic CO 2 conversion efficiency of the S-scheme heterojunction remains limited mainly attributed to the sluggish interfacial charge carrier migration and poor light utilization efficiency. Herein, we prepare an InOOH/ZnIn 2 S 4 hollow sphere S-scheme heterojunction with 0D/2D contact interface for enhancing photocatalytic CO 2 conversion performance. Specifically, the hollow sphere morphology can cause the multireflection of incident light within the photocatalyst leading to enhanced light absorption of the photocatalyst. In addition, the 0D/2D contact interface can facilitate the photogenerated charge carrier migration transfer over the InOOH/ZnIn 2 S 4 S-scheme heterojunction. Furthermore, combining in situ irradiated X-ray photoelectron spectroscopy (ISIXPS) characterization and radicals trapping test, it is affirmed the accumulation of photogenerated holes and electrons respectively on InOOH and ZnIn 2 S 4 , which is beneficial for the effective utilization of photogenerated charge carriers. As a result, the photocatalytic CO 2 conversion performance of the optimized InOOH/ZnIn 2 S 4 is ca. 25.8 times higher than that of pristine ZnIn 2 S 4 . Our reported results demonstrate a facile yet effective strategy for enhancing the interfacial photogenerated charge carrier migration and light utilization efficiency of S-scheme heterojunction. We design InOOH/ZnIn 2 S 4 hollow sphere S-scheme heterojunction with 0D/2D contact interface for enhancing photocatalytic CO 2 conversion performance. Specifically, hollow sphere structure can improve light absorption capability, while 0D/2D contact interface can enhance interfacial charge dynamics of InOOH/ZnIn 2 S 4 S-scheme heterojunction.