A comprehensive experimental and DFT analysis on thermoelectric properties of Sb, Te co-doped Bi2Se3 polycrystals

材料科学 兴奋剂 热电效应 固体力学 热电材料 工程物理 冶金 分析化学(期刊) 纳米技术 光电子学 复合材料 热力学 热导率 有机化学 物理 工程类 化学
作者
Suchitra Puthran,Ganesh Shridhar Hegde,A. N. Prabhu,Vikash Mishra,Tzu‐Yi Yang,Y. K. Kuo
出处
期刊:Journal of Materials Science [Springer Science+Business Media]
卷期号:59 (26): 11817-11834 被引量:6
标识
DOI:10.1007/s10853-024-09865-1
摘要

Abstract As tellurides and selenides of Bismuth are extensively used thermoelectric materials in the low-temperature range with refrigeration application, A concerted effort is put forth to boost the ZT by co-doping the pristine Bi 2 Se 3 with antimony (Sb) on cation end and tellurium (Te) on anion side of the compound. The double sintered solid-state reaction method is employed in the preparation of Bi 2 Se 3 and (Bi 1− x Sb x ) 2 Se 2.7 Te 0.3 polycrystalline pellets, with x = 0.02, 0.04, and 0.06. The sample exhibits a rhombohedral structure with the space group of R $$\overline{3 }$$ 3 ¯ m. FESEM and EDAX analysis are used to confirm surface morphology and elemental composition of the produced samples. The thermoelectric measurements for the pristine and co-doped samples were conducted by the physical property measurement system as well as a considerable increase in the Seebeck coefficient of − 115 µV/K is observed for 0.02 doping of the Sb which is 4.2 times greater than as for pristine (S = − 28 µV/K). Higher concentration doping ( x = 0.04, 0.06) has not reflected any Seebeck coefficient advancement. In contrast, the lowest total thermal conductivity at a low-temperature regime (< 50 K) is observed for x = 0.06 doping concentration which at near room temperature increases beyond the pristine thermal conductivity; whereas, x = 0.02, 0.04 doping concentration shows a decrement in total thermal conductivity at low, at room temperature region the values are almost equivalent to that of pristine. The co-doped samples’ electrical resistivity is substantially less than pristine sample. The highest power factor of 3 × 10 –4 µW/mK 2 is obtained for the x = 0.02 sample. The highest ZT value for the x = 0.02 sample is almost 28 times more than a pristine sample. We conducted a study where we combined experimental and DFT methods to investigate thermoelectric properties incorporated into pristine and doped with antimony and tellurium on Bi 2 Se 3 . We have employed this combination to investigate the partial density of states, Seebeck coefficient, power factor using the Boltzmann transport equation. Theoretical thermoelectric data were derived and compared to experimental observations. Hence, using combined experimental and theoretical investigations helps to predict with higher accuracy of thermoelectric properties of semiconducting materials.
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