Turn-On Voltage Instability of β-Ga2O3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations

Turn-on voltage instability of beta-gallium oxide ($\beta $-Ga2O3) vertical trench Schottky barrier diodes (SBDs) with different fin-channel orientations was investigated. Fins oriented along the [010] direction exhibited the highest turn-on voltage stability and the smallest hysteresis, while fin channels oriented along the [100] direction exhibited the greatest instability. This study suggests that charge trapping at the sidewalls of$\beta $-Ga2O3 trench SBDs differs based on the fin channel orientation and that fin channels oriented along the [010] direction possess the best electrical characteristics and reliability.