放大器
预失真
邻道
邻道功率比
宽带
dBc公司
单片微波集成电路
电气工程
电子工程
数据库管理
拓扑(电路)
晶体管
工程类
材料科学
CMOS芯片
电信
电压
作者
Xianfeng Que,Jun Li,Yanjie Wang
出处
期刊:Electronics
[Multidisciplinary Digital Publishing Institute]
日期:2024-05-11
卷期号:13 (10): 1882-1882
被引量:4
标识
DOI:10.3390/electronics13101882
摘要
This article presents a new broadband three-way series Doherty power amplifier (DPA) topology, which enables a broadband output power back-off (OBO) efficiency enhancement of up to 10 dB or higher. The proposed DPA topology achieves Doherty load modulation and three-way power combining through a transformer, which requires only a low coupling factor, thus facilitating its implementation in double-sided PCBs or monolithic microwave integrated circuit (MMIC) processes. The design equations for the proposed DPA topology are proposed and analyzed in detail. A proof-of-concept PA at the 2.1–2.8 GHz band using commercial GaN transistors was designed and fabricated to validate the proposed concept. Within the operating frequency band, it achieves a saturated output power (Psat) of 44.5–46.5 dBm with a peak drain efficiency (DE) of 60–72%, and 43–52% DE at 10 dB OBO. Moreover, under a 20 MHz long-term evolution (LTE)-modulated signal, the PA demonstrates a 36.8–37.5 dBm average output power (Pavg) and 47–53% average drain efficiency (DEavg). Notably, the adjacent channel leakage ratio (ACLR) is as low as −35–−28.2 dBc without any digital predistortion (DPD).
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