Miniaturized high-frequency sine wave gating InGaAs/InP single-photon detector

光电子学 材料科学 集成电路 探测器 砷化铟镓 光电探测器 正弦波 光子 光学 砷化镓 物理 电气工程 工程类 电压
作者
Wenzhe Jiang,Gao Xinjiang,Yuqiang Fang,Jianhong Liu,Yong Zhou,Li-qun Jiang,Wei Chen,G. Jin,Jun Zhang,Jian-Wei Pan
出处
期刊:Review of Scientific Instruments [American Institute of Physics]
卷期号:89 (12) 被引量:15
标识
DOI:10.1063/1.5055376
摘要

High-frequency gating InGaAs/InP single-photon detectors (SPDs) are widely used for applications requiring single-photon detection in the near-infrared region such as quantum key distribution. Reducing SPD size is highly desired for practical use, which is favorable to the implementation of further system integration. Here we present, to the best of our knowledge, the most compact high-frequency sine wave gating (SWG) InGaAs/InP SPD. We design and fabricate an InGaAs/InP single-photon avalanche diode (SPAD) with optimized semiconductor structure, and then encapsulate the SPAD chip and a mini-thermoelectric cooler inside a butterfly package with a size of 12.5 mm $\times$ 22 mm $\times$ 10 mm. Moreover, we implement a monolithic readout circuit for the SWG SPD in order to replace the quenching electronics that is previously designed with board-level integration. Finally, the components of SPAD, monolithic readout circuit and the affiliated circuits are integrated into a single module with a size of 13 cm $\times$ 8 cm $\times$ 4 cm. Compared with the 1.25 GHz SWG InGaAs/InP SPD module (25 cm $\times$ 10 cm $\times$ 33 cm) designed in 2012, the volume of our miniaturized SPD is reduced by 95\%. After the characterization, the SPD exhibits excellent performance with a photon detection efficiency of 30\%, a dark count rate of 2.0 kcps and an afterpulse probability of 8.8\% under the conditions of 1.25 GHz gating rate, 100 ns hold-off time and 243 K. Also, we perform the stability test over one week, and the results show the high reliability of the miniaturized SPD module.
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