New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Resonant tunneling diodes, being the fastest electronic devices to date, operate by relying on one of the most surprising quantum-mechanical effects: tunneling. Taking advantage of this ultrafast process, however, has proven to be difficult within the nitride family of semiconductors. New techniques for growing GaN crystals have now led to unprecedented observations of resonant tunneling physics in nitride quantum devices.