雪崩光电二极管
偏压
光电二极管
CMOS芯片
动态范围
光电子学
单光子雪崩二极管
电压
像素
二极管
图像传感器
材料科学
高动态范围
光学
物理
探测器
电气工程
工程类
作者
Hyunkyu Ouh,Boyu Shen,Matthew L. Johnston
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2019-10-14
卷期号:55 (2): 392-403
被引量:27
标识
DOI:10.1109/jssc.2019.2944856
摘要
This article presents a fully integrated, wide linear dynamic range (DR) optical sensor array combining linear and single-photon avalanche diode (SPAD) operation within each pixel. A pulse-counting readout scheme provides in-pixel digitization in an area-efficient manner for both the operation modes, enabling fully parallel measurement across the array. The proposed dual-mode optical sensor array alternately requires high-voltage (10-20 V) and low-voltage supply (2-5 V) for reverse bias of the photodiodes, which is provided by a reconfigurable, closed-loop high-voltage charge pump in the same substrate. An 8 × 8 array architecture along with the dual-mode bias generator is fabricated in a general purpose 180-nm CMOS process and demonstrates 129-dB DR while maintaining linear photoresponse operating with a dual-mode frame rate of 20 Hz. We present a pixel design methodology for implementing a dual-mode optical sensor scalable to an array format, as well as high-voltage dc-dc conversion in a low-voltage CMOS process.
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