Locally-tailored structure of an elastomeric substrate for stretchable circuits

We demonstrate a new process for fabricating a hybrid elastomeric polydimethylsiloxane (PDMS) substrate, which can provide a high ratio (as large as ∼50) of the elastic modulus between the active device region and the interconnect area, as well as a locally tailored surface profile for each region. For this process, a Si master mold with a dual surface profile is prepared, where locally flat regions are distributed within a wavy-surfaced area. The stiffer elastomeric islands for active devices are formed on the flat regions by photolithography of a photo-patternable and hard PDMS layer (E ∼ 160 MPa), over which a soft PDMS layer (E ∼ 2 to 3 MPa) is casted. By releasing the whole PDMS layer from the mold, a hybrid silicone substrate with stiff and flat islands embedded within a soft and wavy matrix is obtained. In this hybrid structure, active devices located on the stiff regions can provide high reliability under stretched conditions, while most strain is accommodated by wavy interconnects within the soft area. Such beneficial effects are demonstrated by organic thin film transistors produced on the hybrid substrate.