锡
钙钛矿(结构)
Spike(软件开发)
铅(地质)
材料科学
光电子学
纳米技术
化学工程
化学
结晶学
冶金
计算机科学
地质学
工程类
软件工程
地貌学
作者
Gaurav Kapil,Teresa S. Ripolles,Kengo Hamada,Yuhei Ogomi,Takeru Bessho,Takumi Kinoshita,Jakapan Chantana,Kenji Yoshino,Qing Shen,Taro Toyoda,Takashi Minemoto,Takurou N. Murakami,Hiroshi Segawa,Shuzi Hayase
出处
期刊:Nano Letters
[American Chemical Society]
日期:2018-04-27
卷期号:18 (6): 3600-3607
被引量:111
标识
DOI:10.1021/acs.nanolett.8b00701
摘要
Frequently observed high Voc loss in tin-lead mixed perovskite solar cells is considered to be one of the serious bottle-necks in spite of the high attainable Jsc due to wide wavelength photon harvesting. An amicable solution to minimize the Voc loss up to 0.50 V has been demonstrated by introducing an n-type interface with spike structure between the absorber and electron transport layer inspired by highly efficient Cu(In,Ga)Se2 solar cells. Introduction of a conduction band offset of ∼0.15 eV with a thin phenyl-C61-butyric acid methyl ester layer (∼25 nm) on the top of perovskite absorber resulted into improved Voc of 0.75 V leading to best power conversion efficiency of 17.6%. This enhancement is attributed to the facile charge flow at the interface owing to the reduction of interfacial traps and carrier recombination with spike structure as evidenced by time-resolved photoluminescence, nanosecond transient absorption, and electrochemical impedance spectroscopy measurements.
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