抵抗
平版印刷术
电子束光刻
纳米
纳米尺度
材料科学
纳米技术
极紫外光刻
分辨率(逻辑)
解吸
扫描电子显微镜
光刻胶
光电子学
化学
吸附
计算机科学
图层(电子)
有机化学
复合材料
人工智能
作者
David Pires,James L. Hedrick,Anuja De Silva,Jane Frommer,Bernd Gotsmann,Heiko Wolf,M. Despont,Urs Duerig,Armin Knoll
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2010-04-22
卷期号:328 (5979): 732-735
被引量:298
标识
DOI:10.1126/science.1187851
摘要
For patterning organic resists, optical and electron beam lithography are the most established methods; however, at resolutions below 30 nanometers, inherent problems result from unwanted exposure of the resist in nearby areas. We present a scanning probe lithography method based on the local desorption of a glassy organic resist by a heatable probe. We demonstrate patterning at a half pitch down to 15 nanometers without proximity corrections and with throughputs approaching those of Gaussian electron beam lithography at similar resolution. These patterns can be transferred to other substrates, and material can be removed in successive steps in order to fabricate complex three-dimensional structures.
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