Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

The effect of annealing one monolayer of Sb on p-InP on the surface Fermi level position and the band bending due to Ag deposition on these well-ordered surfaces have been studied using photoemission spectroscopy. The adsorption of one monolayer of Sb on p-InP gives a Fermi level position 0.85 eV above the valence band maximum (VBM). However, with increasing annealing temperature, the band bending decreases and recovers to nearly the flatband condition above 200 °C. The Fermi level movement of annealed InP shows a correlation with the surface stoichiometry of phosphorus and indium. Ag deposition on these annealed Sb/p-InP interfaces gives an anomalously low band bending of 0.5 eV above the VBM.