带隙基准
偏压
晶体管
终端(电信)
材料科学
电压
电子线路
硅带隙温度传感器
电阻抗
光电子学
电气工程
等效电路
灵敏度(控制系统)
高阻抗
电流(流体)
电压基准
电子工程
计算机科学
工程类
跌落电压
电信
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:1974-12-01
卷期号:9 (6): 388-393
被引量:438
标识
DOI:10.1109/jssc.1974.1050532
摘要
A new configuration for realization of a stabilized bandgap voltage is described. The new two-transistor circuit uses collector current sensing to eliminate errors due to base current. Because the stabilized voltage appears at a high impedance point, the application to circuits with higher output voltage is simplified. Incorporation of the new two-transistor cell in a three-terminal 2.5-V monolithic reference is described. The complete circuit is outlined in functional detail together with analytical methods used in the design. The analytical results include sensitivity coefficients, gain and frequency response parameters, and biasing for optimum temperature performance. The performance of the monolithic circuit, which includes temperature coefficients of 5 ppm//spl deg/C over the military temperature range, is reported.
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