Microwave dielectric properties of Ti3SiC2 powders synthesized by solid state reaction

Abstract Ti 3 SiC 2 powders were synthesized by the solid state reaction in a vacuum using Ti/Si/TiC mixture powders as the starting materials. X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy were utilized in analyzing phase, morphology, and chemical composition of the prepared powders, respectively. It was found that the powder synthesized at 1350 °C had the higher purity of Ti 3 SiC 2 . The dielectric permittivities of Ti 3 SiC 2 samples were determined in the frequency range of 8.2–12.4 GHz. Results showed that the sample with higher purity of Ti 3 SiC 2 had the greater real part of complex permittivity e ′ and dielectric loss tan  δ , indicating a good application prospect in microwave absorbing materials. The mechanism of microwave dielectric loss for Ti 3 SiC 2 was discussed.