拉曼光谱
去极化
激发
声子
拉曼散射
等离子体子
材料科学
极化(电化学)
光谱学
光电子学
半导体
波长
光学
物理
化学
凝聚态物理
医学
内分泌学
物理化学
量子力学
作者
Alexandre Merlen,Jean‐Christophe Valmalette,P. G. Gucciardi,Marc Lamy de la Chapelle,A. Frigout,Razvigor Ossikovski
摘要
Abstract Tip‐enhanced Raman spectroscopy has proven to be a promising technique for stress/strain mapping of silicon‐based semiconductor devices on the nanometer scale. Field enhancement factors of up to 10 4 have been reported and a spatial resolution down to 20 nm has been claimed through exploiting far‐field suppression techniques based on an appropriate choice of the excitation/detection polarization states. In this paper, we show that depolarization of light due to scattering from the tip plays a key role in the selective enhancement of the one‐phonon optical mode peak at 520 cm −1 with respect to the two‐phonon ones. The spatial confinement of the selective enhancement has been studied by means of approach curves, and its dependence on the excitation wavelength and power further explored. Conclusions on the physical nature of the enhancement (depolarization‐ or plasmonic‐based) are presented. Copyright © 2009 John Wiley & Sons, Ltd.
科研通智能强力驱动
Strongly Powered by AbleSci AI