Top-Gated Monolayer MoS 2 Transistors on Growth Substrate by One-Step Integration of High-κ Dielectrics and Low-Resistance Bilayer Contacts

, and on-state current of ∼22.4 μA/μm. Furthermore, functional logic gates (inverters, NOR and NAND gates) are constructed, verifying the feasibility of this plug-and-probe approach.