收发机
波分复用
光子学
光电子学
光子集成电路
材料科学
波长
CMOS芯片
作者
N. D. Qi,Qianli Ma,Ang Li,Minye Zhu,Ruoyu Wu,Yongliang Xiong,Yingjie Ma,Haoran Yin,Han Liu,Menghan Yang,Daofa Wang,Peng Wang,Yang Qu,Yujun Xie,Guike Li,Liyuan Liu,Ming Li
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2025-07-15
卷期号:60 (10): 3613-3625
被引量:8
标识
DOI:10.1109/jssc.2025.3585584
摘要
A monolithically integrated dense wavelength-division multiplexing (DWDM) silicon photonics (SiPh) transceiver is presented. Based on the high-Q micro-ring resonation, four 200-GHz spaced wavelengths transmitting and receiving at 50 Gb/s/ $\lambda $ each are demonstrated. All necessary electronic and photonic circuits are fully integrated on a single CMOS chip, including four-channel driver (Drv), transimpedance amplifier (TIA), micro-ring modulator (MRM), micro-ring filter (MRF), and photodetector (PD). An asymmetric inductive-peaking technique is proposed in the co-designed Drv, compensating for insufficient bandwidth (BW) and dynamic nonlinearity of the MRM. To overcome process and temperature variations, closed-loop wavelength stabilization is accomplished with field-programmable gate array (FPGA) algorithm. Implemented in 45-nm silicon-on-insulator (SOI) CMOS, the experimental results show clear eyes at $4{\lambda }{\times }50$ -Gb/s transmitting and receiving, respectively, with ${\lt } 10{^{-12}}$ bit error rate (BER). At 50-Gb/s/lane speed, the proposed transceiver achieves 176 Gb/s/mm2 BW density and 3.5-pJ/bit power efficiency, which is boosted to 224-Gb/s/mm2 and 2.85-pJ/bit running at 64 Gb/s/lane. Full-link transceiver and multi- $\lambda $ crosstalk experiments are demonstrated at 50 Gb/s.
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