纳米网
范德瓦尔斯力
材料科学
微尺度化学
纳米技术
纳米线
碲
离子键合
异质结
半导体
光电子学
数码产品
化学物理
石墨烯
化学
物理化学
离子
数学教育
数学
有机化学
分子
冶金
作者
You Meng,Xiaocui Li,Xiaolin Kang,Wanpeng Li,Wei Wang,Zhengxun Lai,Weijun Wang,Quan Quan,Xiuming Bu,SenPo Yip,Pengshan Xie,Dong Chen,Dengji Li,Fei Wang,Chi-Fung Yeung,Changyong Lan,Chuntai Liu,Lifan Shen,Yang Lü,Fu‐Rong Chen,Chun‐Yuen Wong,Johnny C. Ho
标识
DOI:10.1038/s41467-023-38090-8
摘要
Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm2/Vs, ultrafast photoresponse below 3 μs in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands.
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